T.W. Hickmott
Journal of Applied Physics
Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.
T.W. Hickmott
Journal of Applied Physics
P. Solomon, B. Laikhtman
Superlattices and Microstructures
G.M. Cohen, C. Cabral Jr., et al.
MRS Proceedings 2002
P. Solomon, S.E. Laux, et al.
DRC 2009