S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Scanning Tunneling Microscopy (STM) on boron-doped, p-type Si(111) confirmed the main structural features of the 7 × 7 reconstruction of nearly intrinsic n-type material, in particular the three-fold rotational symmetry. In the p-doped material, one distinct maximum is absent in about every fifth cell. This is attributed to a surface-boron dopant, implying an appreciable surface segregation of boron. © 1985.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Kigook Song, Robert D. Miller, et al.
Macromolecules