Conference paper
Sub-40nm V-groove MOSFETs
J. Appenzeller, R. Martel, et al.
DRC 2001
Transient measurements of drain current are made as the gate voltage is pulsed in Al0.35Ga0.65As/GaAs depletion mode modulation-doped field-effect transistors. Large nonexponential decays are observed in the switching characteristics. Evidence is given which shows that these transients are caused by the emptying and filling of deep donors in the Al0.35Ga0.65As.
J. Appenzeller, R. Martel, et al.
DRC 2001
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
T.W. Hickmott, P. Solomon, et al.
Applied Physics Letters
P. Solomon
DRC 2008