Conference paper
SiCGe Ternarv Allovs - Extending Si-based heterostructures
Subramanian S. Iyer, K. Eberl, et al.
ESSDERC 1992
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
Subramanian S. Iyer, K. Eberl, et al.
ESSDERC 1992
E.T. Yu, M. Johnson, et al.
Journal of Crystal Growth
D. Grischkowsky, C.C. Chi, et al.
TMPEO 1986
M.B. Ketchen, D. Grischkowsky, et al.
Applied Physics Letters Applied Physics Letters