Subramanian S. Iyer, K. Eberl, et al.
Microelectronic Engineering
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
Subramanian S. Iyer, K. Eberl, et al.
Microelectronic Engineering
J.-M. Halbout, D. Grischkowsky
Applied Physics Letters
G. Arjavalingam, J.-M. Halbout, et al.
TMPEO 1986
S. Tiwari, H.I. Hanafi, et al.
DRC 1994