Novel Integration Approach for III-V Microdisk Cavities on Si
Yannick Baumgartner, Daniele Caimi, et al.
GFP 2019
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
Yannick Baumgartner, Daniele Caimi, et al.
GFP 2019
Veeresh Deshpande, V. Djara, et al.
Solid-State Electronics
Christophe Rossel, P. Weigele, et al.
Solid-State Electronics
Benedikt Kersting, Vladimir Ovuka, et al.
Scientific Reports