Eric J. Zhang, Laurent Schares, et al.
CLEO 2018
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Eric J. Zhang, Laurent Schares, et al.
CLEO 2018
William M. J. Green, Chi Xiong, et al.
NANOCOM 2016
Daeik Kim, Jonghae Kim, et al.
IEEE Electron Device Letters
Q. Liu, Jim Adkisson, et al.
ECS Meeting 2012