Conference paper
CMOS Integrated Ge detectors
Jason Orcutt, John Ellis-Monaghan, et al.
FiO 2014
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Jason Orcutt, John Ellis-Monaghan, et al.
FiO 2014
Basanth Jagannathan, Mounir Meghelli, et al.
IEEE Electron Device Letters
Wei-Min Lance Kuo, Yuan Lu, et al.
IEEE TNS
Rajan Arora, En Xia Zhang, et al.
IEEE TNS