On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds
- Jiahui Yuan
- John D. Cressler
- et al.
- 2009
- IEEE Transactions on Electron Devices
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36 results for David C. Ahlgren
Gate-induced-drain-leakage current in 45-nm CMOS technology
- Xiaohin Yuan
- Jae-Eun Park
- et al.
- 2008
- IEEE T-DMR
On the frequency limits of SiGe HBTs for TeraHertz applications
- Yuan Jiahui
- Ram Krithivasan
- et al.
- 2007
- BCTM 2007
Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology
- Xiaobin Yuan
- Jae-Eun Park
- et al.
- 2007
- IIRW 2007
Manufacturable parasitic-aware circuit-level FETs in 65-nm SOI CMOS technology
- Daeik Kim
- Jonghae Kim
- et al.
- 2007
- IEEE Electron Device Letters
Present status and future directions of SiGe HBT technology
- Marwan H. Khater
- Thomas N. Adam
- et al.
- 2006
- LEC 2006
A 70GHz manufacturable complementary LC-VCO with 6.14GHz tuning range in 65nm SOI CMOS
- Daeik D. Kim
- Jonghae Kim
- et al.
- 2007
- ISSCC 2007
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
CMOS mixed-signal circuit process variation sensitivity characterization for yield improvement
- Daeik Kim
- Ongyeun Cho
- et al.
- 2006
- CICC 2006
Pushing the performance limits of SiGe HBT technology
- Marwan Khater
- Thomas Adam
- et al.
- 2006
- ECS Meeting 2006