Conference paper
SILICIDE CONTACT AND GATE IN MICROELECTRONIC DEVICES.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
We demonstrate here that bilayer films consisting of Si and transition metals with a layer thickness of 15-40 nm are promising materials for archival optical storage. They show a large optical reflectivity change before and after silicide formation, have a long lifetime at room temperature, and are nontoxic.
K.N. Tu
International Symposium on Methods and Materials in Microelectronic Technology 1982
G. Ottaviani, K.N. Tu, et al.
Applied Physics Letters
U. Köster, D.R. Campbell, et al.
Thin Solid Films
S. Mader, S.R. Herd
Journal of Applied Physics