Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Paper
Silicide Schottky barriers: An elemental description
Abstract
A model for reactive Schottky barrier formation is proposed and applied to silicide contacts on silicon. Approximate workfunctions calculated assuming a silicon excess near the silicide/silicon interface reconcile measured barrier heights with a simple Schottky description of their energetics. © 1980.