Ideal Schottky diodes on passivated silicon
- M. Wittmer
- J. Freeouf
- 1992
- Physical Review Letters
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49 results for J. Freeouf
Comment on Electronic structure of ideal metal/GaAs contacts
- J. Freeouf
- J. Woodall
- et al.
- 1991
- Physical Review Letters
Spectroscopic ellipsometry of E1-like transitions in nanometer-thickness Ge layers
- J. Freeouf
- J.C. Tsang
- et al.
- 1990
- Physical Review Letters
Microscopic compound formation at the Pd-Si(111) interface
- J. Freeouf
- G.W. Rubloff
- et al.
- 1979
- Physical Review Letters
Comment on selection-rule effects in electron-energy-loss spectroscopy of Ge and GaAs surfaces
- J. Freeouf
- 1976
- Physical Review Letters
Relation of schottky barriers to empty surface states on III-V semiconductors
- D.E. Eastman
- J. Freeouf
- 1975
- Physical Review Letters
Photoemission partial state densities of overlapping p and d states for NiO, CoO, FeO, MnO, and Cr2O3
- D.E. Eastman
- J. Freeouf
- 1975
- Physical Review Letters
Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)
- D.E. Eastman
- J. Freeouf
- 1974
- Physical Review Letters
Temperature- and composition-dependent valence mixing of Sm in cation-and anion-substituted SmS observed by X-ray photoemission spectroscopy
- R.A. Pollak
- F. Holtzberg
- et al.
- 1974
- Physical Review Letters
Spectroscopically observed valence mixing in SmS and related compounds
- J. Freeouf
- D.E. Eastman
- et al.
- 1974
- Physical Review Letters