Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A method for the measurement of the diffusion of oxidant through a growing SiO2 film is presented. The procedure is based on so-called lag-time diffu sion methods in which the time to achieve steady-state oxidation is measured using in situ ellipsometry. Two different modes of oxidant transport were ob served over the range of temperatures investigated (600°-1000°C). At tempera tures of 900°C and below, no lag-time was observed, and steady-state oxida tion was seen at the outset of oxidation. At 1000°C, a lag-time was measured which yielded a value for the diffusion constant, D = 2.3 ˟ 10-13 cm2/sec for dry O2, and this value increased to 2.4 ˟ 10-12 cm2/sec for 1000 ppm H2 in O2. This study provides clear evidence for different dominant modes of oxidation at higher and lower oxidation temperatures. © 1982, The Electrochemical Society, Inc. All rights reserved.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME