Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced electron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such as P and N modulation-doped field-effect transistors (MODFET) will be discussed. At the circuit level, the use of these devices in a complimentary metal-oxide-semiconductor (CMOS) circuit implementation will be considered. © 1995 Chapman & Hall.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983