Conference paper
New preamorphization technique for very shallow p+-n junctions
B. Davari, E. Ganin, et al.
VLSI Technology 1989
Discussed here is the outlook for the SOI technology in the sub-0.25 micrometers CMOS regime. Presented are the key challenges and opportunities for the SOI technology to become a main stream semiconductor technology.
B. Davari, E. Ganin, et al.
VLSI Technology 1989
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993
J. Woodall, H.J. Hovel
Applied Physics Letters
H.J. Hovel
Applied Physics Letters