The DX centre
T.N. Morgan
Semiconductor Science and Technology
A hydrazine-based process for solution-depositing phase-change materials (PCMs) is demonstrated, using KSb5S8 (KSS) as an example. The process involves dissolving the elemental metals and chalcogen in hydrazine at room temperature and spin-coating the solution onto a substrate, followed by a short low-temperature (T ≤ 250°C) anneal. The spin-coated KSS films, which range in thickness from 10 to 90 nm, are examined using variable temperature X-ray diffraction, medium energy ion scattering (MEIS), Rutherford backscattering spectroscopy (RBS), and scanning electron microscopy (SEM). The spin-coated KSS films exhibit a reversible amorphous-crystalline transition with a relatively high crystallization temperature (∼280°C). Selected other chalcogenide-based PCMs are also expected to be suitable for thin-film deposition using this approach. © 2006 American Chemical Society.
T.N. Morgan
Semiconductor Science and Technology
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules