K.W. Guarini, C.T. Black, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Self-assembled devices composed of periodic arrays of 10-nanometer-diameter cobalt nanocrystals display spin-dependent electron transport. Current-voltage characteristics are well described by single-electron tunneling in a uniform array. At temperatures below 20 kelvin, device magnetoresistance ratios are on the order of 10%, approaching the maximum predicted for ensembles of cobalt islands with randomly oriented preferred magnetic axes. Low-energy spin-flip scattering suppresses magnetoresistance with increasing temperature and bias-voltage.
K.W. Guarini, C.T. Black, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
Stephanie G. Grancharov, Hao Zeng, et al.
Journal of Physical Chemistry B
Ph. Avouris, R. Marte, et al.
Applied Physics A: Materials Science and Processing