Takashi Ando, Eduard A. Cartier, et al.
IEEE Electron Device Letters
Thin carbon films were deposited by ion beam sputtering at temperatures of 77-1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.
Takashi Ando, Eduard A. Cartier, et al.
IEEE Electron Device Letters
Steven Steen, Sharee J. McNab, et al.
Microelectronic Engineering
James M.E. Harper, Jerome J. Cuomo, et al.
Nuclear Inst. and Methods in Physics Research, B
Pouya Hashemi, Takashi Ando, et al.
IEDM 2017