Extendibility of NiPt silicide to the 22-nm node CMOS technology
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Thin carbon films were deposited by ion beam sputtering at temperatures of 77-1073 K. Using Rutherford backscattering spectrometry and electron energy loss spectroscopy, the trends in film density and bonding were examined as a function of deposition conditions. It has been found that film density and sp3 bonding character unexpectedly increased with increased substrate thermal conductivity and decreasing substrate temperature, reaching values of 2.9 g/cc and 50%, respectively.
Kazuya Ohuchi, Christian Lavoie, et al.
IWJT 2008
Thong Q. Ngo, Agham Posadas, et al.
Journal of Crystal Growth
Jerome J. Cuomo, John Bruley, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Martin M. Frank, SangBum Kim, et al.
Microelectronic Engineering