A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- F. Liu
- R.R. Yu
- et al.
- 2008
- IEDM 2008
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30 results for James P. Doyle
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technology
- S. Sankaran
- S. Arai
- et al.
- 2006
- IEDM 2006
Atomic-beam alignment of inorganic materials for liquid-crystal displays
- P. Chaudhari
- James Lacey
- et al.
- 2001
- Nature
Chip package interaction in ultra low-k/copper interconnect technology
- X.-H. Liu
- T.M. Shaw
- et al.
- 2007
- ICEPT 2007
Experimental determination of the toughness of crack stop structures
- T.M. Shaw
- E. Liniger
- et al.
- 2007
- IITC 2007
BEOL interconnects for 45 nm node and beyond
- R.R. Yu
- J. Doyle
- et al.
- 2005
- VMIC 2005
Metal-organic atomic layer deposition of metals for applications in interconnect technology
- O. Van Der Straten
- S.M. Rossnagel
- et al.
- 2005
- ECS Meeting 2005
Looking into the crystal ball: Future device learning using hybrid E-beam and optical lithography
- S.E. Steen
- S.J. McNab
- et al.
- 2005
- Microlithography 2005
Channel cracking in low-k films on patterned multi-layers
- X.-H. Liu
- T.M. Shaw
- et al.
- 2004
- IITC 2004
Ion beam alignment for liquid crystal display fabrication
- J. Doyle
- P. Chaudhari
- et al.
- 2003
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms