Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
First-principles total-energy methods have been used to study the stability of the strained monolayer superlattice (GaP)1/(InP)1 (001). We find a value of 4 mRy for the heat of formation, suggesting that this superlattice is unstable to disproportionation into its bulk constituent compounds. Upon formation of the superlattice, a small charge transfer from GaP to the more ionic InP is found. The Ga-P and In-P bond lengths in (GaP)1/(InP)1 are within 1% of their bulk theoretical values. © 1989 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, M.B. Small
JES
Lawrence Suchow, Norman R. Stemple
JES
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry