Frances M. Ross, Cheng-Yen Wen, et al.
Philosophical Magazine
The formation of abrupt Si/Ge heterointerfaces in nanowires presents useful possibilities for bandgap engineering. We grow Si nanowires containing thick Ge layers and sub-1 nm thick Ge "quantum wells" and measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial compressive strains of several percent, while stress at the Si/Ge interface causes lattice rotation. High strains can be achieved in these heterostructures, but we show that they are unstable to interdiffusion.
Frances M. Ross, Cheng-Yen Wen, et al.
Philosophical Magazine
Cheng-Yen Wen, Jerry Tersoff, et al.
Physical Review Letters
Muhammad Shahid, Nulati Yesibolati, et al.
Journal of Power Sources
Jeung Hun Park, Nicholas M. Schneider, et al.
Nano Letters