P.M. Mooney, F. Legoues, et al.
Applied Physics Letters
We report high-resolution x-ray diffraction measurements of relaxed Si 0.7Ge0.3 layers on (001) Si substrates. Strain was relieved either by a glide-limited mechanism in structures where the composition was changed abruptly or by a nucleation-limited mechanism in structures having a compositionally graded intermediate layer. We find that the broadening of the x-ray peak of the surface alloy layer is similar in both cases, although the threading dislocation densities ranged from 1011 cm-2 to 5×106 cm-2. The effect of the threading dislocations on the x-ray peak widths is masked by the mosaic structure caused by the network of misfit dislocations underneath the layer.
P.M. Mooney, F. Legoues, et al.
Applied Physics Letters
P.M. Mooney, T.A. Kennedy
Journal of Physics C: Solid State Physics
D. Singh, S.J. Koester, et al.
Electronics Letters
P.M. Mooney, F. Legoues, et al.
MRS Fall Meeting 1993