C. Godet, Jerzy Kanicki, et al.
Journal of Applied Physics
We report for the first time on the stretched exponential time dependence of positive charge and spin generated by subband-gap ultraviolet illumination in gate-quality nitrogen-rich amorphous silicon nitride films. We have found that a stretched exponential function, which characterizes dispersive charge transport in silicon nitride, gives the best description of our experimental results. We also propose a mechanism which we believe is responsible for the creation of the positive charge and spin in the amorphous silicon nitride films.
C. Godet, Jerzy Kanicki, et al.
Journal of Applied Physics
Jerzy Kanicki, D. Jousse
IEEE Electron Device Letters
D. Jousse, Jerzy Kanicki
Applied Physics Letters
M. Zelikson, K. Weiser, et al.
Journal of Non-Crystalline Solids