F.J. Himpsel, P. Heimann, et al.
Physical Review B
High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and -0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.
F.J. Himpsel, P. Heimann, et al.
Physical Review B
F.R. McFeely, J.F. Morar, et al.
Physical Review B
T.A. Jung, Y.W. Mo, et al.
Physical Review Letters
V. Pérez-Dieste, O.M. Castellini, et al.
Applied Physics Letters