Conference paper
INVERSE PHOTOEMISSION AT SEMICONDUCTOR SURFACES.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and -0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
Th. Fauster, F.J. Himpsel
Physical Review B
F.J. Himpsel, U.O. Karlsson, et al.
Materials Science and Engineering B
F.J. Himpsel, F.R. McFeely, et al.
Physical Review B