Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Raman scattering and optical transmission measurements are used to study the strains appearing in GaSb-AlSb superlattices. Raman resonances at the E1 transition of GaSb and frequency shifts of both GaSb and AlSb LO phonons for different samples indicate that the strains affect mostly the less abundant component of the superlattice. Our results show that the understanding of the valence-band offset for these systems remains an open problem. © 1986.
T.N. Morgan
Semiconductor Science and Technology
Revanth Kodoru, Atanu Saha, et al.
arXiv
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Hiroshi Ito, Reinhold Schwalm
JES