Ankur Agrawal, Saekyu Lee, et al.
ISSCC 2021
The changes in tungsten (W) film growth and resistance are studied using different titanium nitride (TiN) and tantalum nitride (TaN) underlayer films. The underlayers are analyzed by surface characterization techniques to obtain the differences in surface morphology and grain sizes that influence the growth of W on these films. Different precursors and processes used for TiN deposition affect the W growth and film properties. It is important to monitor the changes in incoming TiN resistance as a part of the W process qualification. This enables maintaining W process stability and reducing fab downtime due to false fails.
Ankur Agrawal, Saekyu Lee, et al.
ISSCC 2021
Shanti Pancharatnam, Wei Tsu Tseng, et al.
ECS J. Solid State Sci. Technol.
Swagath Venkataramani, Xiao Sun, et al.
Proceedings of the IEEE
Shanti Pancharatnam, J. Wynne, et al.
ASMC 2019