J.D. Cressler, T.C. Chen, et al.
Bipolar Circuits and Technology Meeting 1989
A self-aligned I2 L/MTL technology featuring collectors doped from and contacted by polysilicon, self-aligned collector and base contact edges, and metal-interconnected bases is described. Experimental ring-oscillator circuits designed with 2.5 -μm design rules and fabricated with this technology exhibit gate delays as small as 0.8 ns at Ic –100 μA for fan-in = I and fan-out = 3. Increased wiring flexibility and improved circuit density are inherent advantages of this self-aligned technology. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.
J.D. Cressler, T.C. Chen, et al.
Bipolar Circuits and Technology Meeting 1989
Tak H. Ning, Denny D. Tang
Proceedings of the IEEE
Tze-Chiang Chen, Kai-Yap Toh, et al.
IEEE Electron Device Letters
T. Min, J.Z. Sun, et al.
Journal of Applied Physics