Will SOI have a life for the low-power market?
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
A self-aligned I2 L/MTL technology featuring collectors doped from and contacted by polysilicon, self-aligned collector and base contact edges, and metal-interconnected bases is described. Experimental ring-oscillator circuits designed with 2.5 -μm design rules and fabricated with this technology exhibit gate delays as small as 0.8 ns at Ic –100 μA for fan-in = I and fan-out = 3. Increased wiring flexibility and improved circuit density are inherent advantages of this self-aligned technology. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.
Jin Cai, Zhibin Ren, et al.
IEEE International SOI Conference 2008
L. Thon, G.P. Coleman, et al.
LPED 1996
Tak H. Ning
IEEE Transactions on Electron Devices
Zhibin Ren, Jin Cai, et al.
CSTIC 2011