PaperSilicon hydride etch products from the reaction of atomic hydrogen with Si(100)Stephen M. Gates, Roderick R. Kunz, et al.Surface Science
PaperAdsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surfaceStephen M. GatesSurface Science
PaperEffect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnectsE. T. Todd Ryan, Stephen M. Gates, et al.Journal of Applied Physics
PaperSilicon Chemical Vapor Deposition One Step at a Time: Fundamental Studies of Silicon Hydride ChemistryJoseph M. Jasinski, Stephen M. GatesAccounts of Chemical Research
