PaperIBM 193nm semiconductor resist: Material properties, resist characteristics and lithographic performanceP. Rao Varanasi, Ann Marie Mewherter, et al.J. Photopolym. Sci. Tech.
PaperFundamental investigations of the free radical copolymerization and terpolymerization of maleic anhydride, norbornene, and norbornene tert-butyl ester: In-situ mid-infrared spectroscopic analysisA.J. Pasquale, R.D. Allen, et al.Macromolecules
Conference paperDissolution/swelling behavior of cycloolefin polymers in aqueous baseHiroshi Ito, R.D. Allen, et al.Microlithography 2000
Conference paperPolymer chemistry considerations in the design of robust 193 nm photoresistsR.D. Allen, Hiroshi Ito, et al.ACS Spring 1999
