PaperLaser heating and melting of thin films on low-conductivity substratesR. Ghez, R.A. LaffJournal of Applied Physics
PaperAn analysis of combined surface and volume diffusion processes in crystal growth. II. Asymmetric capture at stepsR. Ghez, G.H. GilmerJournal of Crystal Growth
PaperNondestructive depth profiling of carrier lifetimes in full silicon wafersD. Guidotti, J.S. Batchelder, et al.Applied Physics Letters
PaperReasons to believe pulsed laser annealing of Si does not involve simple thermal meltingJ.A. Van Vechten, R. Tsu, et al.Physics Letters A
