DIFFUSION OF ION-IMPLANTED BORON AND PHOSPHORUS DURING RAPID THERMAL ANNEALING OF SILICON.
- G.S. Oehrlein
- R. Ghez
- et al.
- 1984
- ICDS 1984
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42 results for R. Ghez
Silicon Oxidation Studies: The Role of H2O
- E.A. Irene
- R. Ghez
- 2019
- JES
The Dissolution Kinetics of GaAs in Undersaturated Isothermal Solutions in the Ga-Al-As System
- M.B. Small
- R. Ghez
- et al.
- 2019
- JES
On Fitting Error Functions to Data
- R. Ghez
- M.B. Small
- 2019
- JES
The Analysis of Diffusion Data by a Method of Moments
- R. Ghez
- J.D. Fehribach
- et al.
- 2019
- JES
A Mathematical Model for Silicide Oxidation
- S.-L. Zhang
- R. Ghez
- et al.
- 2019
- JES
Laser heating and melting of thin films on low-conductivity substrates
- R. Ghez
- R.A. Laff
- 2008
- Journal of Applied Physics
The formation of Ga1-xAlxAs layers on the surface of GaAs during continual dissolution into Ga-Al-As solutions
- M.B. Small
- R. Ghez
- et al.
- 2008
- Applied Physics Letters
Growth and dissolution kinetics of III-V heterostructures formed by LPE
- M.B. Small
- R. Ghez
- 2008
- Journal of Applied Physics
Growth and dissolution kinetics of III-V heterostructures formed by LPE. II. Comparison between thermodynamic and kinetic models
- M.B. Small
- R. Ghez
- 2008
- Journal of Applied Physics