PaperElectrically-alterable read-only-memory using Si-rich SiO2 injectors and a floating polycrystalline silicon storage layerD.J. DiMaria, K.M. DeMeyer, et al.Journal of Applied Physics
PaperInterface traps induced by hole trapping in metal-oxide semiconductor devicesY. Roh, L.P. Trombetta, et al.Journal of Non-Crystalline Solids
PaperDirect measurement of the energy distribution of hot electrons in silicon dioxideS.D. Brorson, D.J. DiMaria, et al.Journal of Applied Physics
PaperTemperature dependence of trap creation in silicon dioxideD.J. DiMariaJournal of Applied Physics
