L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
The temperature dependence of the surface-state electronic transition for cleaved Ge(111)-2×1 is reported and compared to previous results on Si(111)-2×1. Ge(111)-2×1 shows an almost linear dependence of the surface-state band gap between 30 and 295 K, varying between 535 and 415 meV, respectively. Cleaved Ge(111)-2×1 shows little evidence for the defect-induced states usually found, even on excellent single-domain 2×1 cleaves of Si(111). © 1986 The American Physical Society.
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules