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PaperSource-Drain Contact Resistance in CMOS with Self-Aligned TiSi2Yuan Taur, Jack Yuan-Chen Sun, et al.IEEE T-ED
PaperA Highly Latchup-Immune 1-μm CMOS Technology Fabricated with 1-MeV Ion Implantation and Self-Aligned TiSi2Fang-Shi J. Lai, L.K. Wang, et al.IEEE T-ED
PaperEffect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devicesC.C.-H. Hsu, L.K. Wang, et al.Journal of Electronic Materials