Ronald Troutman
Synthetic Metals
Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.
Ronald Troutman
Synthetic Metals
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics