The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

T.H. DiStefano; D.E. Eastman

doi:10.1016/0038-1098(71)90643-0

Solid State Communications

Paper

15 Dec 1971

The band edge of amorphous SiO₂ by photoinjection and photoconductivity measurements

View publication

Abstract

Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.

Conference paper

Soft x-ray diffraction of striated muscle

S.F. Fan, W.B. Yun, et al.

Proceedings of SPIE 1989

Conference paper

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

S. Cohen, J.C. Liu, et al.

MRS Spring Meeting 1999

Paper

Pair and triplet interactions in argon

J.A. Barker, D. Henderson, et al.

Molecular Physics

Paper

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide

Daniel J. Coady, Amanda C. Engler, et al.

ACS Macro Letters

View all publications

Abstract

Related

Soft x-ray diffraction of striated muscle

Characterization of thin dielectric films as copper diffusion barriers using triangular voltage sweep

Pair and triplet interactions in argon

Catalyst chelation effects in organocatalyzed ring-opening polymerization of lactide