Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Paper
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
Abstract
Photoconductivity measurements indicate an interband gap of 9.0 eV in amorphous SiO2. Correspondingly, a gap of 8.9 ± 0.2 eV is seen in photoinjection measurements which are insensitive to band edge selection rules. © 1971.
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