PaperTP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure SourceH. Rupprecht, J. WoodallIEEE T-ED
PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs LasersM.H. Pilkuhn, H. RupprechtProceedings of the IEEE
PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. Woodall, H. Rupprecht, et al.IEEE T-ED
