M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
We have constructed a theory of avalanche breakdown for polar semiconductors such as InSb and InAs in which the primary electron-scattering mechanism is polar-optical-mode scattering. Because of the anisotropy of polar scattering, previous theories of avalanche breakdown involving the assumptions of an isotropic scattering probability and/or a nearly isotropic electron distribution should not be appropriate for polar semiconductors. We have assumed a very anisotropic electron distribution which is narrowly drawn out in the direction of the electric field. We also distinguish between small- and large-angle scattering, since for polar scattering, the probability of scattering to a state close to the initial state is much greater than the probability for scattering through a large angle, although the latter process results in a greater loss of energy, since it places the electron in a state in which it is decelerated by the field. The electron distribution function is obtained analytically, and from it the pair-generation rate and electron drift velocity are calculated for InSb and InAs. The pair-generation rate for InSb is obtained using the ionicity which best fits the low-field-mobility data and a hyperbolic conduction band, and it agrees very well with experimental data on the generation rate in InSb. The calculated drift velocity at fields above 200 V/cm is also in good agreement with the drift-velocity measurements by Glicksman and Hicenbothem, showing that the electron distribution is, indeed, highly anisotropic. © 1968 The American Physical Society.
M.R. Lorenz, W. Reuter, et al.
Applied Physics Letters
P.E. Schmid, M.L.W. Thewalt, et al.
Solid State Communications
W.P. Dumke
Applied Physics Letters
W.P. Dumke, M.R. Lorenz, et al.
Physical Review B