R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
The dependence of the current on the electric field in silicon-rich silicon dioxide (Si-rich SiO2) is studied with the use of a theoretical model based on quantum-mechanical tunneling between a random array of small semiconducting Si islands in a large-band-gap SiO2 insulator matrix. The current J is calculated in the presence of an electric field F by a simple percolation method for various regimes of external voltage. In the high-field limit, the current is found to obey a Fowler-Nordheim law, 1n J-FF, but with F weakly dependent on the field F. © 1984 The American Physical Society.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Ronald Troutman
Synthetic Metals
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
D.J. Dimaria, D.R. Kerr
Applied Physics Letters