S. Thevuthasan, G.S. Herman, et al.
Surface Science
Exposure to ultraviolet light induces paramagnetic, metastable defects in hydrogenated amorphous silicon nitride (a-SiN1.6) thin films. The thermally induced decay of the light-induced paramagnetic defects follows a stretched exponential dependence on annealing time, exp [-(t/τ) β], and displays a temperature-dependent β and τ. These results indicate that a multiple trapping or a trap-controlled hopping mechanism is involved in the annealing process with an apparent activation energy of 0.43 eV.
S. Thevuthasan, G.S. Herman, et al.
Surface Science
Jerzy Kanicki, M. Sankaran, et al.
Applied Physics Letters
M. Hoinkis, E.D. Tober, et al.
Applied Physics Letters
Sean E. Curry, P. Lenahan, et al.
Applied Physics Letters