Conference paper
Charge trapping in aggressively scaled metal gate/high-κ stacks
E. Gusev, V. Narayanan, et al.
IEDM 2004
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
E. Gusev, V. Narayanan, et al.
IEDM 2004
C.J. Anderson, J.H. Magerlein, et al.
GaAs IC 1987
A.D. Marwick, Joyce C. Liu, et al.
Nuclear Inst. and Methods in Physics Research, B
A.C. Callegari, E.T-S. Pan, et al.
Applied Physics Letters