A. Paccagnella, A.C. Callegari, et al.
Applied Physics Letters
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
A. Paccagnella, A.C. Callegari, et al.
Applied Physics Letters
A.C. Callegari, P. Jamison, et al.
IEDM 2004
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983