A. Paccagnella, A.C. Callegari, et al.
Applied Physics Letters
Paper
Thermal stability of polycrystalline silicon/metal oxide interfaces
Abstract
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
Related
A.C. Callegari, P. Jamison, et al.
IEDM 2004
Conference paper
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
Conference paper
THRESHOLD CHARACTERISTICS OF MUTUALLY COUPLED SQUIDS.
C.C. Chi, L. Krusin-Elbaum, et al.
International Conference on Low Temperature Physics (LT) 1983