J.F. Ziegler, P.A. Saunders, et al.
IBM J. Res. Dev
The thermal stability of polycrystalline silicon/metal oxide interfaces was investigated by using transmission electron microscopy (TEM). TEM showed strong reactions at the poly-Si/metal oxide interface when annealed at 1000°C. It was found that the thermal stability of polycrystalline silicon/metal oxide interface was significantly enhanced when the poly-Si was plasma deposited using silane diluted in He.
J.F. Ziegler, P.A. Saunders, et al.
IBM J. Res. Dev
Huiling Shang, E. Gousev, et al.
ICSICT 2004
D.J. Webb, J. Fompeyrine, et al.
Microelectronic Engineering
Sufi Zafar, A.C. Callegari, et al.
Applied Physics Letters