Conference paper

Thin film transistors with layered a-Si:H structure

Abstract

Thin film transistors TFTs with the layered a-Si structure are presented and discussed. Compared with the conventional single layer a-Si TFT, transistor characteristics of this new structure can be superior or inferior, depending on the deposition condition and number of the bulk (non-interface) a-Si layers. The mechanism influencing transistor characteristics is discussed. Changes of these TFTs' characteristics are not significant, e.g., the mobility varies within 20%. More data are being collected to verify the statistical significance of this kind of TFT.

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