Reactive Ion Etching of PECVD n+ a-Si:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation
- M.S. Crowder
- 2019
- JES
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46 results for Yue Kuo
Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon Gases
- Yue Kuo
- 2019
- JES
Reactive Ion Etching of Sputter Deposited Tantalum Oxide and its Etch Selectivity to Tantalum
- Yue Kuo
- 2019
- JES
A Self-Aligned, Trilayer, A-Si:H Thin Film Transistor Prepared from Two Photomasks
- Yue Kuo
- 2019
- JES
Factors Affecting the Molybdenum Line Slope by Reactive Ion Etching
- Yue Kuo
- 2019
- JES
A new process using two photo-masks to prepare trilayer thin film transistors
- Yue Kuo
- 2019
- JES
Reactive ion etching of indium tin oxide by SiCl4-based plasmas - Substrate temperature effect
- Yue Kuo
- 1998
- Vacuum
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - A critical review
- Yue Kuo
- 1998
- Vacuum
Critical plasma process issues in the fabrication of thin film transistor liquid crystal displays
- Y. Kuo
- 1998
- ICOPS 1998
Deposition of highly conductive n+ silicon film for a-Si:H thin film transistor
- Y. Kuo
- K. Latzko
- 1998
- MRS Spring Meeting 1998