INVERSE PHOTOEMISSION AT SEMICONDUCTOR SURFACES.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
Angle-resolved inverse photoemission with tunable photon energies has been used to map out the unoccupied bands of graphite and lithium-intercalated graphite. At the Brillouin zone center the bottom of the lowest band is found at 4.0±0.5 eV above the Fermi level in graphite. This band shows strong dispersion normal to the basal plane in excellent agreement with recent self-consistent band-structure calculations. A similar three-dimensional band is found in lithium-intercalated graphite shifted 3 eV to lower energy. © 1983 The American Physical Society.
F.J. Himpsel, D. Straub, et al.
ICPS Physics of Semiconductors 1984
Th. Fauster, F.J. Himpsel
Physical Review B
G. Hollinger, F.J. Himpsel
Applied Physics Letters
Eric L. Shirley, L.J. Terminello, et al.
Physical Review B