G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters
The electric field dependence of electron mobilities in p-type silicon with doping density of 4.5×1016 cm-3 at room temperature was measured using a time-of-flight technique. It was found that the electron mobility at zero field is very close to that in n-type silicon of equivalent doping density; however, it decreases rapidly with electric field in a range from 0 to 0.2 kV/cm and more gradually at higher fields. The effect is attributed to the electron-hole scattering.
G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters
D.D. Tang, F. Fang, et al.
IEDM 1985
R.B. Dunford, E.E. Mitchell, et al.
Journal of Physics Condensed Matter
M.J. Uren, T.N. Theis, et al.
Solid State Communications