PaperIncreased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfacesS. Chang, I.M. Vitomirov, et al.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperTwo-dimensional arsenic-precipitate structures in GaAsM.R. Melloch, C.L. Chang, et al.Journal of Crystal Growth
Conference paperHigh transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contactsC.L. Lin, M.O. Aboelfotoh, et al.IEDM 1993
PaperEffect of temperature on the stimulated emission from GaAs p-n junctionsM.H. Pilkuhn, H. Rupprecht, et al.Solid-State Electronics