Conference paper
Carrier leakage in 1.3 μm SCH quantum well lasers
S. Hausser, C. Harder, et al.
ISLC 1992
The material interface of a molecular beam epitaxy grown Al 0.5Ga0.5As-GaAs heterostructure is investigated on a cross-sectional (110) cleavage plane using tunnel spectroscopy. The depleted n-type region and the electron confinement layer adjacent to the interface are identified with local current-voltage spectroscopy. The spatial width of these layers is close to 15 nm. The spectroscopy can be interpreted with the valence-band offset in the interface, and a value of 0.35 eV is found for this quantity.
S. Hausser, C. Harder, et al.
ISLC 1992
H. Hillmer, A. Forchel, et al.
Solid State Electronics
B.J. Van Zeghbroeck, C. Harder, et al.
IEDM 1986
D.J. Arent, L. Brovelli, et al.
Applied Physics Letters