J.H. Stathis, R. Bolam, et al.
INFOS 2005
All-high-Tc-material edge junctions consisting of laser-ablated Y-Ba-Cu-O electrodes and an in situ rf-sputter-deposited MgO barrier have been fabricated whose I-V characteristics show tunneling-related effects. These include a junction resistance with an exponential dependence on the nominal-barrier thickness, gaplike structure observed in the conductance curves, and Josephson effects. These properties are very sensitive to the choice of materials-processsing method for the junction interfaces. © 1992 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
David B. Mitzi
Journal of Materials Chemistry