Simone Raoux, Guy M. Cohen, et al.
MRS Online Proceedings Library
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of LEFF/λ, where LEFF is the effective channel length and λ is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by ∼2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control. © 2010 IEEE.
Simone Raoux, Guy M. Cohen, et al.
MRS Online Proceedings Library
Guy M. Cohen, Leathen Shi, et al.
ASMC 2014
Michael A. Guillorn, Josephine Chang, et al.
VLSI Technology 2011
Amlan Majumdar, Zhibin Ren, et al.
IEEE Transactions on Electron Devices