True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in topgate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices. © 2009 American Chemical Society.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry
A. Krol, C.J. Sher, et al.
Surface Science
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter