A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We present here a complete experimental determination of the optical properties and electronic structure of the polymers poly(di-n-pentylsilane) and poly(di-n-hexylsilane) from 2 to 44 eV. The electronic structure revealed by these measurements is consistent with the assignment of the higher-energy transitions to the carbon-based sidechains and the lower-energy transitions to the silicon backbone. The transitions attributed to the silicon backbone correlate well with predictions by an independent band-structure calculation using the local-density approximation. © 1991 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009