Conference paper
Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
K.N. Tu
Materials Science and Engineering: A
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering