J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
E. Burstein
Ferroelectrics