Revanth Kodoru, Atanu Saha, et al.
arXiv
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Revanth Kodoru, Atanu Saha, et al.
arXiv
David B. Mitzi
Journal of Materials Chemistry
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SPIE Advanced Lithography 2010
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APS Global Physics Summit 2025