Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Resistivity measurements and x-ray absorption near-edge structure spectroscopy were performed on single crystals of 0.2 mol % Cr-doped SrTiO3, which exhibit an electrical-field-induced insulator-to-conductor transition with a resistive memory effect. The electrically conducting state is shown to be metallic. The insulator-to-metal transition is accompanied by an increase of the Cr valence underneath the anode from Cr3+ to approximately Cr4+. This indicates that the insulator-to-metal transition is associated with internal doping due to a change of the Cr valence, thereby providing free carriers to the Ti 3d band. © 2005 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
T.N. Morgan
Semiconductor Science and Technology
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
R. Ghez, M.B. Small
JES